Abstract
Ferroelectrics are very interesting materials for nonvolatile data storage due to the fact that they deliver very low power programming operation combined with nonvolatile retention. For 60 years researchers have been inspired by these fascinating possibilities and have tried to build ferroelectric memory devices that can compete with mainstream technologies in their respective time. The progress of the current concepts is limited by the low compatibility of ferroelectrics like PZT with CMOS processing. Therefore, PZT or SBT based 1T1C ferroelectric memories are not scaling below 130 nm and 1T ferroelectric FETs based on the same materials are still struggling with low retention and very thick memory stacks. Hafnium oxide, a standard material in sub 45 nm CMOS, can show ferroelectric hysteresis with promising characteristics. By adding a few percent of silicon and annealing the films in a mechanically confined manner. Boescke et al. demonstrated ferroelectric hysteresis in hafnium oxide for the first time. Recently, a large number of dopants including Y, Al, Gd and Sr have been used to induce ferroelectricity in HfO2. This paper reviews the current status of hafnium oxide based ferroelectrics, its application to field effect transistors and puts this approach into a wider context of earlier developments in the field.
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