Two-terminal non-volatile memory devices using Silicon Nanowires as the storage medium

pages 78-83
Konstantina Saranti, Shashi Paul
Abstract | € 45,00

Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

pages 84-90
Takumi Moriyama, Ryosuke Koishi, Kouhei Kimura, Satoru Kishida, Kentaro Kinoshita
Abstract | € 45,00

Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation

pages 91-95
Kentaro Kinoshita, Takahiro Yamasaki, Sho Yura, Takahisa Ohno, Satoru Kishida
Abstract | € 45,00

Resistive switching behavior in undoped α-Fe2O3 film with a low resistivity

pages 96-99
Yukiko Ogawaa, Yuji Sutoub, Daisuke Andoc, Junichi Koiked
Abstract | € 45,00

Two Terminal Non-volatile Memory Devices using Diamond-like Carbon and Silicon Nanostructures

pages 100-106
Sattam Alotaibi, Nare Gabrielyan,Shashi Paul
Abstract | € 45,00

Switching in Polymer Memory Devices based on Polymer and Nanoparticles Admixture

pages 107-112
Z.H. Alhalafi, S.Paul
Abstract | € 45,00

Thermal Properties of In-Sb-Te Thin Films for Phase Change Memory Application

pages 113-119
Huu Tan Nguyen, Andrzej Kusiak, Jean-Luc Battaglia, Cecile Gaborieau, Yanick Anguy, Roberto Fallica, Claudia Wiemer, Alessio Lamperti, Massimo Longo
Abstract | € 45,00

Thermal conductivity measurement of a Sb2Te3 phase change nanowire

pages 120-125
Abdelhak Saci, Jean-Luc Battaglia, Andrzej Kusiak, Indrayush De, Roberto Fallica, Massimo Longo
Abstract | € 45,00

MRAM concepts for sub-nanosecond switching and ultimate scalability

pages 126-135
Ioan Lucian Prejbeanu, Sebastien Bandiera, Ricardo Sousa, Bernard Dieny
Abstract | € 45,00

Doped Hafnium Oxide – An Enabler for Ferroelectric Field Effect Transistors

pages 136-145
Thomas Mikolajick, Stefan Müller, Tony Schenk, Ekaterina Yurchuk, Stefan Slesazeck, Uwe Schröder, Stefan Flachowsky, Ralf van Bentum, Sabine Kolodinski, Patrick Polakowski, Johannes Müller
Abstract | € 45,00

Integration of STT-MRAMs for Embedded Cache Memories

pages 146-149
Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Kouji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida
Abstract | € 45,00
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