This site makes use of cookies necessary for the operation and useful for the purposes described in the cookie policy. If you want to learn more, see the cookie policy. By closing this banner, scrolling this page, clicking on a link or continuing navigation in any other way, you consent to the use of cookies.
In this paper, shrink process for small MTJs is investigated from the point of scalability. In the shrink process, various nitrogen or oxygen plasma treatments are done after the MTJ (CoFeB/MgO/CoFeB) etching. During this plasma treatment, the sidewall surface of the MTJ is modified, which results in the small electrical MTJ size of around 20 nm.
Proposed techniques are scalable and promising for sub-20 nm MTJ generation in high density cache MRAM application.
The tantalum oxide memristor may have a promising future as key element in innovative very-high speed ultra-low power extra-large density nonvolatile memories. It is therefore timely and relevant to investigate the nonlinear dynamics of this device in view of the interesting opportunities it may open up in the world of electronics in the years to come. In numerical simulations of an accurate model of the tantalum oxide memristor manufactured at Hewlett Packard Labs we observed a surprising phenomenon which was never reported earlier. Under AC periodic excitation the memristor exhibits unique asymptotic behaviour, irrespective of the initial condition. Thus the device may be stimulated in such a way to forget its past history. This memory erase effect, unexpected in a memristor device, is closely related to the concept of fading memory from nonlinear system theory, and was recently confirmed through experiments conducted on a sample device.
Address
Links
Information